Hemt devices with low-resistance ohmic contacts via barrier regrowth
AssigneeThe Regents of the University of Michigan
InventorsMd Tanvir Hasan, Zetian Mi
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Abstract
A method for fabricating a transistor device includes forming a heterostructure including a III-nitride channel layer and a III-nitride semiconductor layer supported by the III-nitride channel layer, removing a portion of the III-nitride semiconductor layer in a channel region of the transistor device, the portion being disposed between source/drain regions in the III-nitride semiconductor layer, and growing a barrier layer in the channel region where the III-nitride semiconductor layer has been removed.
Claims20
A method for fabricating a transistor device, the method comprising:
- forming a heterostructure comprising a III-nitride channel layer and a III-nitride semiconductor layer supported by the III-nitride channel layer;
- removing a portion of the III-nitride semiconductor layer in a channel region of the transistor device, the portion being disposed between source/drain regions in the III-nitride semiconductor layer;
- and
- growing a barrier layer in the channel region where the III-nitride semiconductor layer has been removed.
A transistor device comprising:
- a substrate;
- and
- a heterostructure supported by the substrate, the heterostructure comprising:
- a III-nitride channel layer;
- a III-nitride source/drain layer supported by the III-nitride channel layer, the III-nitride source/drain layer being patterned to define source/drain regions;
- and
- a III-nitride barrier layer supported by the III-nitride channel layer, the III-nitride barrier layer being disposed in a channel region between the source/drain regions of the III-nitride source/drain layer;
- wherein:
- the III-nitride channel layer, the III-nitride barrier layer, or both the III-nitride channel layer and the III-nitride barrier layer comprise an Al-rich III-nitride semiconductor;
- and
- the heterostructure further comprises a III-nitride spacer layer disposed between the III-nitride channel layer and the III-nitride barrier layer.
Dependencies are inferred from the claim text.