Method for manufacturing a contact on a silicon carbide semiconductor substrate, and silicon carbide semiconductor device

A method for manufacturing a contact on a silicon carbide semiconductor substrate, the method comprising:

• providing a 4H—SiC semiconductor substrate;
• directly irradiating a surface area, having a crystalline structure, of the 4H—SiC semiconductor substrate with a first thermal annealing laser beam to generate a phase separation of the surface area comprising at least a 3C—SiC layer comprising a silicon portion and a carbon portion;
• removing at least some of the silicon portion;
• removing at least some of the carbon portion;
• and
• depositing a contact material onto the 3C—SiC layer to form a contact layer on the 4H—SiC semiconductor substrate.

A silicon carbide semiconductor device, comprising

• a 4H—SiC semiconductor substrate;
• a 3C—SiC layer;
• and
• a contact layer in contact with the 3C—SiC layer at a surface of the 4H—SiC semiconductor substrate, wherein the contact layer is a backside contact.