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US 6,936,850 B2Granted
Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material
AssigneeSiCED Electronics Development GmbH & Co. KG
InventorsPeter Friedrichs, Dethard Peters, Reinhold Schoerner
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Abstract
The semiconductor device includes a first semiconductor region made from n-conducting SiC and a second semiconductor region made from p-conducting SiC. A Schottky contact layer electrically contacts the first semiconductor region, and an ohmic p-contact layer electrically contacts the second semiconductor region. Both contact layers consist of a nickel-aluminum material. This allows both contact layers to be annealed together without adversely effecting the Schottky contact behavior.
Claims7
A semiconductor device made from silicon carbide, comprising:
- a first semiconductor region including n-conducting silicon carbide and a second semiconductor region including p-conducting silicon carbide;
- a Schottky contact layer electrically contacting said first semiconductor region;
- an ohmic p-contact layer electrically contacting said second semiconductor region;
- said Schottky contact layer and said ohmic p-contact layer consisting of a material having at least a first component and a second component;
- said first component being nickel (Ni);
- said second component being aluminum (Al);
- said first and second components forming a substantially homogenous material composition;
- and
- said Schottky contact layer and said ohmic p-contact layer forming a cohesive common contact layer on both first and second semiconductor regions, said cohesive contact layer having said homogenous material composition of said first and second components.
6 more elements
Dependencies are inferred from the claim text.