Semiconductor device and method for manufacturing semiconductor device
AssigneesFuji Electric Co., Ltd., Denso Corporation
InventorNaoyuki OHSE
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Abstract
There is provided a semiconductor device including: a SiC substrate which has an upper surface and a lower surface; an element structure which is formed on the upper surface of the SiC substrate; a metal silicide portion which is formed at a part of the lower surface of the SiC substrate; and a lower surface electrode which is in contact with the metal silicide portion and with an exposed region of the lower surface which is not covered by the metal silicide portion, in which at least a part of the exposed region has a crystal structure different from that of a contact region of the SiC substrate which is in contact with the metal silicide portion.
Claims20
A semiconductor device comprising:
- a SiC substrate which has an upper surface and a lower surface;
- an element structure which is formed on the upper surface of the SiC substrate;
- a metal silicide portion which is formed at a part of the lower surface of the SiC substrate;
- and
- a lower surface electrode which is in contact with the metal silicide portion and with an exposed region of the lower surface which is not covered by the metal silicide portion, wherein
- at least a part of the exposed region has a crystal structure different from that of a contact region of the SiC substrate which is in contact with the metal silicide portion.
A method for manufacturing a semiconductor device comprising:
- depositing ohmic metal at least at a part of a lower surface of a SiC substrate;
- performing laser annealing on the ohmic metal to cause agglomeration and silicidation, and forming a metal silicide portion;
- performing laser annealing on at least a part of the lower surface of the SiC substrate to form a 3C-SiC crystal structure;
- and
- forming a lower surface electrode to be in contact with both of the metal silicide portion and the 3C-SiC crystal structure.
Dependencies are inferred from the claim text.