Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

A method of manufacturing a silicon carbide semiconductor device, the method comprising:

• preparing a semiconductor substrate;
• forming a drift layer of a first conductivity type, at a surface of the semiconductor substrate, the drift layer made of silicon carbide, the drift layer having a first surface and a second surface opposite to each other, the second surface facing the semiconductor substrate;
• forming a plurality of source regions of the first conductivity type at the first surface of the drift layer, the plurality of source regions containing silicon carbide;
• forming a silicide layer on the plurality of source regions;
• forming a barrier layer containing titanium (Ti) in contact with the silicide layer;
• and
• forming a main electrode in contact with the barrier layer, wherein
• said forming the silicide layer includes:
• forming a film that is a single layer nickel (Ni) film or a two-layer film including a Ni film and a Ti film,
• performing a first heat treatment on the film under an atmosphere of an inert gas, at a temperature of no lower than 400 degrees C but lower than 600 degrees C,
• removing unreacted portions of the film, and
• performing a second heat treatment on the film under the atmosphere containing the inert gas, at a temperature lower than 1000 degrees C.