Silicon carbide device and method for forming a silicon carbide device

A silicon carbide device, comprising:

• a silicon carbide substrate;
• a contact layer located on the silicon carbide substrate and comprising nickel and silicon;
• a barrier layer structure comprising titanium and tungsten;
• and
• a metallization layer comprising copper,
• wherein the contact layer is located between the silicon carbide substrate and at least a part of the barrier layer structure,
• wherein the barrier layer structure is located between the silicon carbide substrate and the metallization layer,
• wherein the metallization layer is configured as a contact pad of the silicon carbide device,
• wherein silicon is present within the contact layer throughout a vertical thickness of the contact layer,
• wherein the barrier layer structure forms a direct interface with the contact layer.