Formation of metal cap on metal silicide layer for contact resistance reduction

A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform operations of:

• depositing a metal silicide layer in a feature of a semiconductor substrate in a first processing chamber, the feature comprising a bottom wall and sidewalls;
• moving the semiconductor substrate to a second processing chamber that is integrated with the first processing chamber such that there is not an air break between the first and second processing chambers;
• forming a metal cap layer directly on the metal silicide layer, the metal cap layer comprising a metal cap material selected from the group consisting of tungsten, ruthenium, molybdenum, and alloys thereof, and the metal cap layer formed by a low energy physical vapor deposition (PVD) process of the metal cap material;
• and
• depositing a conductor on the metal cap layer.