H10D 64/0113
The conductive layers comprising highly doped semiconductor materials
Official title: {the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers}
H10D64/0113 (The conductive layers comprising highly doped semiconductor materials) appears on 1,145 US grants and 686 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,145
- Published applications
- 686
- Assignees
- 245
- Inventors
- 1,942
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 7 | 0 |
| 1978 | 11 | 0 |
| 1979 | 3 | 0 |
| 1980 | 7 | 0 |
| 1981 | 7 | 0 |
| 1982 | 5 | 0 |
| 1983 | 4 | 0 |
| 1984 | 10 | 0 |
| 1985 | 10 | 0 |
| 1986 | 8 | 0 |
| 1987 | 22 | 0 |
| 1988 | 21 | 0 |
| 1989 | 32 | 0 |
| 1990 | 32 | 0 |
| 1991 | 59 | 0 |
| 1992 | 54 | 0 |
| 1993 | 46 | 0 |
| 1994 | 23 | 0 |
| 1995 | 20 | 0 |
| 1996 | 11 | 0 |
| 1997 | 17 | 0 |
| 1998 | 18 | 0 |
| 1999 | 25 | 0 |
| 2000 | 36 | 0 |
| 2001 | 48 | 14 |
| 2002 | 38 | 46 |
| 2003 | 31 | 28 |
| 2004 | 36 | 26 |
| 2005 | 23 | 35 |
| 2006 | 10 | 22 |
| 2007 | 17 | 26 |
| 2008 | 21 | 27 |
| 2009 | 15 | 10 |
| 2010 | 14 | 22 |
| 2011 | 18 | 16 |
| 2012 | 13 | 20 |
| 2013 | 22 | 20 |
| 2014 | 17 | 16 |
| 2015 | 27 | 39 |
| 2016 | 31 | 44 |
| 2017 | 48 | 38 |
| 2018 | 18 | 20 |
| 2019 | 30 | 41 |
| 2020 | 52 | 47 |
| 2021 | 31 | 29 |
| 2022 | 24 | 29 |
| 2023 | 20 | 19 |
| 2024 | 17 | 30 |
| 2025 | 22 | 11 |
| 2026 | 10 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method for forming source/drain contacts30 Jun 2026US 12,672,346 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of reducing metal gate resistance for next generation NMOS device application16 Jun 2026US 12,660,271 B2APPLIED Materials.Inc.
- Method for forming source/drain contacts8 Oct 2026US 2026/0314054 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of reducing metal gate resistance for next generation nmos device application17 Sep 2026US 2026/0282480 A1APPLIED Materials.Inc.
- Low temperature n-type contact epi formation27 Aug 2026US 2026/0255645 A1APPLIED Materials.Inc.
- Semiconductor structure and method of manufacturing the same20 Aug 2026US 2026/0247676 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Epitaxial formation with treatment and semiconductor devices resulting therefrom23 Jul 2026US 2026/0215198 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method for forming a thin layer on a semiconductor substrate and apparatus therefor628US 5,178,682 AMitsubishi Denki Kabushiki Kaisha · 1993
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Process for Polycrystalline film silicon growth529US 6,281,098 B1Midwest Research Institute · 2001
- Film formation apparatus488US 8,945,339 B2Tokyo Electron Limited · 2015