Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device includes: a semiconductor substrate including a device region and a dicing line region surrounding the device region; a front surface electrode provided on a front surface of the semiconductor substrate in the device region; a back surface electrode made of a metal and provided on a back surface opposite the front surface of the semiconductor substrate; a first silicide layer provided between the back surface and the back surface electrode in the device region; and a second silicide layer provided between the back surface and the back surface electrode in the dicing line region, wherein contact resistance between the first silicide layer and the semiconductor substrate is lower than contact resistance between the second silicide layer and the semiconductor substrate, and hardness of the second silicide layer is lower than hardness of the first silicide layer.

Dependencies are inferred from the claim text.