H10D 64/01125
The silicides being formed by chemical reaction with the semiconductor after the
Official title: {the silicides being formed by chemical reaction with the semiconductor after the contact hole formation}
H10D64/01125 (The silicides being formed by chemical reaction with the semiconductor after the) appears on 723 US grants and 859 published applications in this corpus.
Search patents in H10D- Granted patents
- 723
- Published applications
- 859
- Assignees
- 102
- Inventors
- 1,512
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 6 | 0 |
| 1997 | 4 | 0 |
| 1998 | 8 | 0 |
| 1999 | 9 | 0 |
| 2000 | 18 | 0 |
| 2001 | 40 | 10 |
| 2002 | 13 | 19 |
| 2003 | 16 | 12 |
| 2004 | 12 | 16 |
| 2005 | 16 | 10 |
| 2006 | 4 | 12 |
| 2007 | 6 | 8 |
| 2008 | 5 | 11 |
| 2009 | 6 | 7 |
| 2010 | 6 | 4 |
| 2011 | 2 | 4 |
| 2012 | 6 | 10 |
| 2013 | 12 | 10 |
| 2014 | 12 | 20 |
| 2015 | 29 | 61 |
| 2016 | 44 | 50 |
| 2017 | 52 | 59 |
| 2018 | 48 | 53 |
| 2019 | 60 | 51 |
| 2020 | 53 | 61 |
| 2021 | 38 | 58 |
| 2022 | 50 | 53 |
| 2023 | 37 | 51 |
| 2024 | 47 | 63 |
| 2025 | 43 | 54 |
| 2026 | 12 | 92 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method of stress release in silicon carbide devices1 Oct 2026US 2026/0305201 A1STMicroelectronics International N. V.
- Semiconductor device and method for manufacturing the same17 Sep 2026US 2026/0282485 A1Kabushiki Kaisha Toshiba
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Most cited
By later US patents
- Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers1,159US 5,278,100 AMicron Technology, Inc. · 1994
- Metal silicide, metal germanide, methods for making the same559US 9,129,897 B2ASM International N.V. · 2015
- Contact structure and method of forming518US 9,831,183 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Wiring structure of semiconductor device and method for manufacturing the same486US 5,998,870 ASamsung Electronics Co., Ltd. · 1999
- Barrier formation using novel sputter deposition method with PVD, CVD, or ALD386US 6,740,585 B2APPLIED Materials.Inc. · 2004