Electrode of semiconductor device and method of manufacturing same
AssigneeTokyo Electron Limited
InventorYasushi Akasaka
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Abstract
A method of manufacturing an electrode of a semiconductor device includes: preparing a semiconductor substrate including an impurity-doped region; forming a first metal layer on the impurity-doped region; forming a second metal layer on the first metal layer; and heating the semiconductor substrate including the first metal layer and the second metal layer, wherein the impurity-doped region contains silicon, wherein the first metal layer contains tantalum, wherein the second metal layer contains titanium, and wherein, by the heating, a first silicide layer containing titanium, tantalum, and silicon is formed on the impurity-doped region, and a second silicide layer containing titanium and silicon is formed on the first silicide layer.
Claims4
A method of manufacturing an electrode of a semiconductor device, the method comprising:
- preparing a semiconductor substrate including an impurity-doped region;
- forming a first metal layer on the impurity-doped region;
- forming a second metal layer on the first metal layer;
- and
- heating the semiconductor substrate including the first metal layer and the second metal layer,
- wherein the impurity-doped region contains silicon,
- wherein the first metal layer contains tantalum,
- wherein the second metal layer contains titanium,
- wherein, by the heating, a silicidation reaction is caused among the impurity-doped region, the first metal layer, and the second metal layer, such that a first silicide layer containing titanium, tantalum, and silicon is formed on the impurity-doped region, and a second silicide layer containing titanium and silicon is formed on the first silicide layer, and
- wherein an impurity concentration of the impurity-doped region in the preparing the semiconductor substrate is set such that an impurity concentration at an interface between the first silicide layer and the impurity-doped region after the silicidation reaction is 1×1020 cm−3 or more.
A method of manufacturing an electrode of a semiconductor device, the method comprising:
- preparing a semiconductor substrate including an impurity-doped region and an oxide film formed on the impurity-doped region;
- forming a first metal layer on the impurity-doped region with the oxide film interposed therebetween;
- forming a second metal layer on the first metal layer;
- and
- heating the semiconductor substrate including the first metal layer and the second metal layer,
- wherein the impurity-doped region contains silicon,
- wherein the oxide film contains silicon dioxide,
- wherein the first metal layer contains a high melting point metal including at least one selected from the group of tantalum, tungsten, and molybdenum,
- wherein the second metal layer contains titanium,
- wherein, by the heating, a silicidation reaction is caused among the impurity-doped region, the first metal layer, and the second metal layer, such that a first silicide layer containing titanium, the high melting point metal, and silicon is formed on the semiconductor substrate, and a second silicide layer containing titanium and silicon is formed on the first silicide layer, and wherein, by the heating, oxygen contained in the oxide film reacts with titanium contained in the second metal layer, such that a titanium oxide layer is formed on the second silicide layer.
Dependencies are inferred from the claim text.