H10D 62/815
Of structures having periodic or quasi-periodic potential variation
Official title: of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
H10D62/815 (Of structures having periodic or quasi-periodic potential variation) appears on 1,211 US grants and 1,263 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,211
- Published applications
- 1,263
- Assignees
- 386
- Inventors
- 1,878
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 3 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 6 | 0 |
| 1987 | 17 | 0 |
| 1988 | 14 | 0 |
| 1989 | 23 | 0 |
| 1990 | 18 | 0 |
| 1991 | 24 | 0 |
| 1992 | 7 | 0 |
| 1993 | 5 | 0 |
| 1994 | 10 | 0 |
| 1995 | 10 | 0 |
| 1996 | 7 | 0 |
| 1997 | 7 | 0 |
| 1998 | 7 | 0 |
| 1999 | 9 | 0 |
| 2000 | 10 | 0 |
| 2001 | 15 | 4 |
| 2002 | 12 | 14 |
| 2003 | 12 | 11 |
| 2004 | 12 | 35 |
| 2005 | 25 | 46 |
| 2006 | 25 | 38 |
| 2007 | 17 | 33 |
| 2008 | 17 | 24 |
| 2009 | 33 | 12 |
| 2010 | 16 | 22 |
| 2011 | 16 | 32 |
| 2012 | 21 | 24 |
| 2013 | 26 | 49 |
| 2014 | 43 | 73 |
| 2015 | 60 | 87 |
| 2016 | 83 | 85 |
| 2017 | 85 | 79 |
| 2018 | 70 | 70 |
| 2019 | 65 | 89 |
| 2020 | 87 | 68 |
| 2021 | 48 | 50 |
| 2022 | 53 | 65 |
| 2023 | 48 | 68 |
| 2024 | 58 | 63 |
| 2025 | 57 | 74 |
| 2026 | 20 | 48 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Surface-doped channels for threshold voltage modulation8 Sep 2026US 12,733,214 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for fabricating semiconductor structure having enhanced hole linear Rashba spin-orbit coupling effect1 Sep 2026US 12,727,208 B2Institute of Semiconductors, Chinese Academy of Sciences
- Source drain formation in gate all around transistor1 Sep 2026US 12,727,214 B2APPLIED Materials.Inc.
- Gate-all-around (GAA) device including a superlattice11 Aug 2026US 12,707,690 B2Atomera Incorporated
- Tin as nuclear spin qubit in silicon4 Aug 2026US 12,701,752 B2National Technology & Engineering Solutions of Sandia, LLC
- High-quality e-mode gan hemt power semiconductor epitaxial wafer using si(100) growth substrate8 Oct 2026US 2026/0313942 A1Wavelord Co., Ltd
- Radiation hardened (rad-hard) devices including a superlattice reservoir layer and related methods24 Sep 2026US 2026/0293250 A1Atomera Incorporated
- Radiation hardened (rad-hard) devices including superlattice to control boron doping profile and related methods24 Sep 2026US 2026/0293251 A1Atomera Incorporated
- Method for making radio frequency silicon-on-insulator (rfsoi) structure including a superlattice24 Sep 2026US 2026/0293623 A1Atomera Incorporated
- Group iii-n devices with buffer structures and methods of manufacturing the same3 Sep 2026US 2026/0262241 A1
Most cited
By later US patents
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates525US 7,521,292 B2The Board of Trustees of the University of Illinois · 2009
- Release strategies for making transferable semiconductor structures, devices and device components321US 7,932,123 B2The Board of Trustees of the University of Illinois · 2011
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates309US 8,198,621 B2The Board of Trustees of the University of Illinois · 2012
- High density nanosheet diodes304US 9,842,835 B1International Business Machines Corporation · 2017
- FinFETs with strained well regions301US 9,601,342 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017