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US 12,727,208 B2Granted
Method for fabricating semiconductor structure having enhanced hole linear Rashba spin-orbit coupling effect
AssigneeInstitute of Semiconductors, Chinese Academy of Sciences
InventorsJunwei Luo, Jiaxin Xiong, Yang Liu, Shan Guan, Shushen Li
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Abstract
A method for fabricating a semiconductor structure having an enhanced hole linear Rashba spin-orbit coupling effect includes: providing a substrate; and growing a germanium quantum well on the substrate. A silicon atomic layer is inserted at an interface between a well and a barrier of the germanium quantum well. The silicon atomic layer includes one or more monolayers.
Claims17
A method for fabricating a semiconductor structure having an enhanced hole linear Rashba spin-orbit coupling effect, comprising:
- providing a substrate;
- and
- growing a germanium quantum well on the substrate, wherein a silicon atomic layer is inserted at an interface between a well and a barrier of the germanium quantum well, wherein the silicon atomic layer comprises one or more monolayers;
- wherein growing the germanium quantum well on the substrate comprises:
- growing a first alloy layer on the substrate;
- growing a first silicon atomic layer on the first alloy layer, wherein the first silicon atomic layer comprises one or more monolayers;
- growing a germanium layer on the first silicon atomic layer;
- growing a second silicon atomic layer on the germanium layer, wherein the second silicon atomic layer comprises one or more monolayers;
- and
- growing a second alloy layer on the second silicon atomic layer;
- the methods further comprises:
- growing a dielectric layer on the germanium quantum well;
- and
- growing a metal electrode on the dielectric layer.
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A semiconductor structure, comprising:
- a substrate;
- and
- a germanium quantum well grown on the substrate, wherein a silicon atomic layer is inserted at an interface between a well and a barrier of the germanium quantum well, wherein the silicon atomic layer comprises one or more monolayers;
- further comprising the substrate, a first alloy layer, a first silicon atomic layer, a germanium layer, a second silicon atomic layer, a second alloy layer, a dielectric layer, and a metal electrode grown sequentially from bottom to top, wherein the first silicon atomic layer and the second silicon atomic layer each comprise one or more monolayers.
1 more element
Dependencies are inferred from the claim text.