Tin as nuclear spin qubit in silicon

A method for coupling qubits, the method comprising:

• drawing, by a number of quantum dot electrodes, an electron from an electron source into a silicon substrate that contains an embedded tin atom;
• moving, with the quantum dot electrodes, the electron adiabatically toward the tin atom to achieve a specified level of hyperfine interaction (HFI) between the electron and the nucleus of the tin atom to minimize the effect of noise;
• holding, with the quantum dot electrodes, the electron at the distance of the specified HFI for a specified duration of time to represent an “on” state;
• and
• moving, with the quantum dot electrodes, the electron adiabatically away from the tin atom to lower the HFI below the specified level and represent an “off” state.

A qubit coupling system, comprising:

• a silicon substrate;
• a tin atom embedded in the silicon substrate;
• a number of quantum dot electrodes over the silicon substrate;
• an electron source connected to the silicon substrate, wherein the quantum dot electrodes are configured to perform an electron-nuclear controlled-phase gate operation by adiabatically moving an electron from the electron source toward the tin atom to achieve a specified level hyperfine interaction (HFI) between the electron and the nucleus of the tin atom to minimize the effect of noise, holding the electron at the distance of specified HFI for a specified duration of time, which represents an “on” state, and adiabatically moving the electron away from the tin atom to lower the HFI below the specified level, which represents an “off” state.