H10D 62/8181
Structures having no potential periodicity in the vertical direction
Official title: {Structures having no potential periodicity in the vertical direction, e.g. lateral superlattices or lateral surface superlattices [LSS]}
H10D62/8181 (Structures having no potential periodicity in the vertical direction) appears on 106 US grants and 103 published applications in this corpus.
Search patents in H10D- Granted patents
- 106
- Published applications
- 103
- Assignees
- 56
- Inventors
- 206
- Latest grant
- 21 Oct 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 3 | 0 |
| 1991 | 6 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 1 |
| 2002 | 0 | 1 |
| 2003 | 2 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 2 |
| 2006 | 1 | 1 |
| 2007 | 0 | 2 |
| 2008 | 1 | 3 |
| 2009 | 3 | 0 |
| 2010 | 1 | 1 |
| 2011 | 1 | 2 |
| 2012 | 2 | 0 |
| 2013 | 1 | 4 |
| 2014 | 2 | 3 |
| 2015 | 3 | 8 |
| 2016 | 9 | 11 |
| 2017 | 7 | 9 |
| 2018 | 5 | 9 |
| 2019 | 9 | 6 |
| 2020 | 8 | 6 |
| 2021 | 6 | 3 |
| 2022 | 4 | 5 |
| 2023 | 3 | 5 |
| 2024 | 7 | 11 |
| 2025 | 5 | 7 |
| 2026 | 0 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Fabricating method of semiconductor device21 Oct 2025US 12,453,149 B2United Microelectronics Corp.
- Method for making DMOS devices including a superlattice and field plate for drift region diffusion5 Aug 2025US 12,382,689 B2Atomera Incorporated
- Nanoribbon-based quantum dot devices10 Jun 2025US 12,328,912 B2Intel Corporation
- Semiconductor element, method of reading out a quantum dot device and system29 Apr 2025US 12,289,912 B2Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO
- Method for making nanostructure transistors with source/drain trench contact liners18 Feb 2025US 12,230,694 B2Atomera Incorporated
- Method for making radio frequency silicon-on-insulator (rfsoi) structure including a superlattice24 Sep 2026US 2026/0293623 A1Atomera Incorporated
- Fabricating Method of Semiconductor Device15 Jan 2026US 2026/0020304 A1United Microelectronics Corp.
- Method for making dmos devices including a superlattice and field plate for drift region diffusion30 Oct 2025US 2025/0338584 A1Atomera Incorporated
- Nitride structure and semiconductor device29 May 2025US 2025/0176234 A1Kabushiki Kaisha Toshiba
- Method for making nanostructure transistors with source/drain trench contact liners8 May 2025US 2025/0151309 A1Atomera Incorporated
Most cited
By later US patents
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates525US 7,521,292 B2The Board of Trustees of the University of Illinois · 2009
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates309US 8,198,621 B2The Board of Trustees of the University of Illinois · 2012
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates272US 8,754,396 B2The Board of Trustees of the University of Illinois · 2014
- Semiconductor device with a vertical MOSFET including a superlattice and related methods141US 7,781,827 B2Mears Technologies, Inc. · 2010
- Semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance120US 7,531,829 B2Mears Technologies, Inc. · 2009