Semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance
AssigneeMears Technologies, Inc.
InventorRichard A. Blanchard
Life of this patent
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Abstract
A semiconductor device may include a substrate and spaced apart source and drain regions defining a channel region therebetween in the substrate. The substrate may have a plurality of spaced apart superlattices in the channel and/or drain regions. Each superlattice may include a plurality of stacked groups of layers, with each group including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions.
Claims25
A semiconductor device comprising:
- a substrate;
- spaced apart source and drain regions defining a channel region therebetween in said substrate;
- said substrate having a plurality of spaced apart superlattices in the drain region;
- each superlattice comprising a plurality of stacked groups of layers with each group comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon, and with the at least one non-semiconductor monolayer being constrained within a crystal lattice of adjacent base semiconductor portions;
- wherein at least some semiconductor atoms from opposing base semiconductor portions are chemically bound together with the chemical bonds traversing the at least one non-semiconductor monolayer therebetween.
A semiconductor device comprising:
- a substrate;
- spaced apart source and drain regions defining a channel region therebetween in said substrate;
- said substrate having a plurality of spaced apart superlattices in the channel region;
- and
- each superlattice comprising a plurality of stacked groups of layers with each group comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon, and with the at least one non-semiconductor monolayer being constrained within a crystal lattice of adjacent base semiconductor portions;
- wherein at least some semiconductor atoms from opposing base semiconductor portions are chemically bound together with the chemical bonds traversing the at least one non-semiconductor monolayer therebetween.
Dependencies are inferred from the claim text.