H10D 62/81
Of structures exhibiting quantum-confinement effects
Official title: of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
H10D62/81 (Of structures exhibiting quantum-confinement effects) appears on 2,179 US grants and 2,298 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,179
- Published applications
- 2,298
- Assignees
- 660
- Inventors
- 3,593
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 3 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 7 | 0 |
| 1987 | 17 | 0 |
| 1988 | 15 | 0 |
| 1989 | 25 | 0 |
| 1990 | 18 | 0 |
| 1991 | 26 | 0 |
| 1992 | 11 | 0 |
| 1993 | 10 | 0 |
| 1994 | 20 | 0 |
| 1995 | 16 | 0 |
| 1996 | 13 | 0 |
| 1997 | 22 | 0 |
| 1998 | 15 | 0 |
| 1999 | 21 | 0 |
| 2000 | 14 | 0 |
| 2001 | 27 | 12 |
| 2002 | 23 | 31 |
| 2003 | 24 | 30 |
| 2004 | 39 | 59 |
| 2005 | 41 | 78 |
| 2006 | 38 | 60 |
| 2007 | 41 | 53 |
| 2008 | 29 | 47 |
| 2009 | 48 | 45 |
| 2010 | 39 | 63 |
| 2011 | 46 | 74 |
| 2012 | 55 | 59 |
| 2013 | 65 | 97 |
| 2014 | 101 | 146 |
| 2015 | 113 | 151 |
| 2016 | 153 | 145 |
| 2017 | 135 | 145 |
| 2018 | 125 | 127 |
| 2019 | 134 | 212 |
| 2020 | 169 | 128 |
| 2021 | 109 | 78 |
| 2022 | 95 | 101 |
| 2023 | 77 | 92 |
| 2024 | 84 | 109 |
| 2025 | 75 | 96 |
| 2026 | 31 | 60 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Quantum heterostructures, related devices and methods for manufacturing the same29 Sep 2026US 12,751,060 B2Ecole Polytechnique de Montreal
- Global control for quantum computing systems22 Sep 2026US 12,744,301 B2Diraq Pty Ltd
- Surface-doped channels for threshold voltage modulation8 Sep 2026US 12,733,214 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for fabricating semiconductor structure having enhanced hole linear Rashba spin-orbit coupling effect1 Sep 2026US 12,727,208 B2Institute of Semiconductors, Chinese Academy of Sciences
- Source drain formation in gate all around transistor1 Sep 2026US 12,727,214 B2APPLIED Materials.Inc.
- High-quality e-mode gan hemt power semiconductor epitaxial wafer using si(100) growth substrate8 Oct 2026US 2026/0313942 A1Wavelord Co., Ltd
- Strain engineering of membrane layers in heterostructures1 Oct 2026US 2026/0304876 A1The University of Chicago
- Radiation hardened (rad-hard) devices including a superlattice reservoir layer and related methods24 Sep 2026US 2026/0293250 A1Atomera Incorporated
- Radiation hardened (rad-hard) devices including superlattice to control boron doping profile and related methods24 Sep 2026US 2026/0293251 A1Atomera Incorporated
- Method for making radio frequency silicon-on-insulator (rfsoi) structure including a superlattice24 Sep 2026US 2026/0293623 A1Atomera Incorporated
Most cited
By later US patents
- Methods and devices for fabricating and assembling printable semiconductor elements883US 7,622,367 B1The Board of Trustees of the University of Illinois · 2009
- Stretchable semiconductor elements and stretchable electrical circuits765US 7,557,367 B2The Board of Trustees of the University of Illinois · 2009
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates525US 7,521,292 B2The Board of Trustees of the University of Illinois · 2009
- Nanocomposite materials with engineered properties395US 6,710,366 B1UltraDots, Inc. · 2004