Method for making radio frequency silicon-on-insulator (rfsoi) structure including a superlattice

A semiconductor device comprising:

• a base semiconductor substrate;
• an oxide layer on the base semiconductor substrate;
• a first epitaxial semiconductor layer on the oxide layer having a thickness of less than 5 nm;
• a superlattice layer on the first epitaxial semiconductor layer, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
• a second epitaxial semiconductor layer above the superlattice layer;
• and
• at least one electronic device in the second epitaxial semiconductor layer.

A semiconductor device comprising:

• a silicon substrate;
• a silicon oxide layer on the silicon substrate;
• a first epitaxial silicon layer on the silicon oxide layer having a thickness of less than 5 nm;
• a superlattice layer on the first epitaxial silicon layer, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions;
• a second epitaxial silicon layer above the superlattice layer;
• and
• at least one electronic device in the second epitaxial silicon layer.