H10D 62/8171
Doping structures
Official title: {Doping structures, e.g. doping superlattices or nipi superlattices}
H10D62/8171 (Doping structures) appears on 182 US grants and 206 published applications in this corpus.
Search patents in H10D- Granted patents
- 182
- Published applications
- 206
- Assignees
- 99
- Inventors
- 396
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 1 | 2 |
| 2004 | 1 | 1 |
| 2005 | 1 | 2 |
| 2006 | 0 | 1 |
| 2007 | 1 | 2 |
| 2008 | 1 | 1 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 1 | 4 |
| 2013 | 1 | 4 |
| 2014 | 4 | 11 |
| 2015 | 7 | 14 |
| 2016 | 14 | 19 |
| 2017 | 21 | 18 |
| 2018 | 18 | 16 |
| 2019 | 15 | 29 |
| 2020 | 17 | 8 |
| 2021 | 7 | 12 |
| 2022 | 17 | 16 |
| 2023 | 11 | 13 |
| 2024 | 7 | 6 |
| 2025 | 11 | 11 |
| 2026 | 5 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Surface-doped channels for threshold voltage modulation8 Sep 2026US 12,733,214 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Tin as nuclear spin qubit in silicon4 Aug 2026US 12,701,752 B2National Technology & Engineering Solutions of Sandia, LLC
- Superlattice structure with stress relaxation layers therein7 Jul 2026US 12,677,457 B2United Microelectronics Corp.
- Methods of formation of a SiGe/Si superlattice9 Jun 2026US 12,652,840 B2APPLIED Materials.Inc.
- Semiconductor structure and method for preparing the same27 Jan 2026US 12,538,530 B2Enkris Semiconductor (Wuxi), Ltd.
- Group iii-n devices with buffer structures and methods of manufacturing the same3 Sep 2026US 2026/0262241 A1
- Hemt transistor27 Aug 2026US 2026/0255659 A1STMicroelectronics International N. V.
- Methods of formation of a sige/si superlattice16 Jul 2026US 2026/0206272 A1APPLIED Materials.Inc.
- Silicon Carbide Based Structures and Devices with Heterodoped Layer(s)4 Jun 2026US 2026/0156887 A1Wolfspeed, Inc.
- Semiconductor structure for high electron mobility transistor30 Apr 2026US 2026/0122996 A1Hiper Semiconductor Inc.
Most cited
By later US patents
- High density nanosheet diodes304US 9,842,835 B1International Business Machines Corporation · 2017
- FinFETs with strained well regions301US 9,601,342 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- FinFETs with strained well regions215US 9,859,380 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Bipolar transistor with monoatomic base layer between emitter and collector layers105US 5,373,186 AMAX-PLANCK-GESELLSCHAFT zur FOERDERUNG der WISSENSCHAFTEN.e.V · 1994
- Semiconductor devices with at least one monoatomic layer of doping atoms92US 4,882,609 AMax-Planck-Gesellschaft zur Forderung der Wissenschafter e.V. · 1989