Hemt transistor
AssigneeSTMicroelectronics International N.V.
InventorsAurore CONSTANT, Mohammed ZEGHOUANE, Ferdinando IUCOLANO
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Abstract
The present disclosure relates to a HEMT transistor. An example HEMT transistor comprises: a first semiconductor layer and a gate arranged on a first surface of the first semiconductor layer. The gate comprises an alternation of at least two first layers and of at least three second layers. The first layers being doped with magnesium and with at least one of the dopant elements selected from among silicon and oxygen and the first layers having a dopant element concentration higher than the dopant element concentration in the second layers.
Claims13
A HEMT transistor comprising:a first semiconductor layer;
- a
- nda gate arranged on a first surface of the first semiconductor layer,
- wherein the gate comprises an alternation of at least two first layers and of at least three second layers, the at least two first layers being doped with magnesium and with at least one dopant element selected from among silicon and oxygen and the at least two first layers have a dopant element concentration higher than the dopant element concentration in the at least three second layers.
A method of forming a HEMT transistor comprising the following successive steps:
- a) forming a first semiconductor layer;
- b) forming at least two first layers in alternation with at least three second layers so as to create a gate on a first surface of the first semiconductor layer, wherein the at least two first layers are doped with magnesium and with at least one dopant element selected from among silicon and oxygen, and the at least two first layers have a dopant element concentration higher than the dopant element concentration in the at least three second layers.
Dependencies are inferred from the claim text.