Silicon Carbide Based Structures and Devices with Heterodoped Layer(s)
AssigneeWolfspeed, Inc.
InventorsWoongsun Kim, Julio Garceran, Sei-Hyung Ryu, Thomas Albert Kuhr
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Abstract
An example power semiconductor device includes a silicon carbide semiconductor structure. The example power semiconductor device includes at least one heterodoped layer in the silicon carbide semiconductor structure. In some implementations, the heterodoped layer includes a first layer having a first dopant concentration of a first conductivity type in a range of about 1×1017/cm3 to about 2×1021/cm3. The heterodoped layer includes a second layer having a second dopant concentration of the first conductivity type that is less than the first dopant concentration of the first layer. In some examples, the second layer may be undoped.
Claims20
A power semiconductor device, comprising:
- a silicon carbide semiconductor structure;
- at least one heterodoped layer in the silicon carbide semiconductor structure,
- wherein the heterodoped layer comprises a first layer having a first dopant concentration of a first conductivity type in a range of about 1×1017/cm3 to about 2×1021/cm3, wherein the first layer has a first thickness in a range of about 10 nanometers to about 200 nanometers.
A power semiconductor device, comprising:
- a silicon carbide semiconductor structure;
- at least one heterodoped layer in the silicon carbide semiconductor structure, wherein the heterodoped layer comprises a first layer having a first dopant concentration of a first conductivity type in a range of about 1×1017/cm3 to about 2×1021/cm3, wherein the heterodoped layer comprises a second layer, wherein the second layer is undoped.
A semiconductor device, comprising:
- a silicon carbide semiconductor structure;
- a heterodoped lattice structure in the silicon carbide semiconductor structure, the heterodoped lattice structure comprising:
- at least two first layers having a first dopant concentration of a first conductivity type in a range of about 1×1017/cm3 to about 3×1019/cm3, wherein each first layer has a thickness in a range of about 10 nanometers to about 200 nanometers;
- at least two second layers having a second dopant concentration of a first conductivity type that is less than the first dopant concentration of the plurality of first layers;
- wherein the at least two first layers and the at least two second layers are arranged in alternating manner through a thickness of the silicon carbide semiconductor structure.
Dependencies are inferred from the claim text.