H10D 62/8161
Potential variation due to variations in composition or crystallinity
Official title: {potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices (lateral superlattices, lateral surface superlattices H10D62/8181)}
H10D62/8161 (Potential variation due to variations in composition or crystallinity) appears on 908 US grants and 935 published applications in this corpus.
Search patents in H10D- Granted patents
- 908
- Published applications
- 935
- Assignees
- 294
- Inventors
- 1,404
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 3 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 16 | 0 |
| 1988 | 10 | 0 |
| 1989 | 19 | 0 |
| 1990 | 14 | 0 |
| 1991 | 18 | 0 |
| 1992 | 6 | 0 |
| 1993 | 4 | 0 |
| 1994 | 8 | 0 |
| 1995 | 7 | 0 |
| 1996 | 6 | 0 |
| 1997 | 5 | 0 |
| 1998 | 5 | 0 |
| 1999 | 9 | 0 |
| 2000 | 9 | 0 |
| 2001 | 13 | 3 |
| 2002 | 11 | 12 |
| 2003 | 9 | 10 |
| 2004 | 11 | 33 |
| 2005 | 23 | 42 |
| 2006 | 24 | 37 |
| 2007 | 16 | 29 |
| 2008 | 15 | 19 |
| 2009 | 32 | 12 |
| 2010 | 14 | 20 |
| 2011 | 15 | 21 |
| 2012 | 17 | 20 |
| 2013 | 18 | 33 |
| 2014 | 29 | 50 |
| 2015 | 43 | 55 |
| 2016 | 52 | 58 |
| 2017 | 56 | 49 |
| 2018 | 46 | 50 |
| 2019 | 49 | 54 |
| 2020 | 61 | 52 |
| 2021 | 33 | 39 |
| 2022 | 30 | 45 |
| 2023 | 31 | 51 |
| 2024 | 50 | 51 |
| 2025 | 42 | 53 |
| 2026 | 16 | 37 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for fabricating semiconductor structure having enhanced hole linear Rashba spin-orbit coupling effect1 Sep 2026US 12,727,208 B2Institute of Semiconductors, Chinese Academy of Sciences
- Source drain formation in gate all around transistor1 Sep 2026US 12,727,214 B2APPLIED Materials.Inc.
- Gate-all-around (GAA) device including a superlattice11 Aug 2026US 12,707,690 B2Atomera Incorporated
- III-N semiconductor structure and method of manufacturing same14 Jul 2026US 12,684,843 B2IVWorks Co., Ltd.
- Co-integrated resonant tunneling diode and high-electron mobility transistor7 Jul 2026US 12,677,435 B2International Business Machines Corporation
- High-quality e-mode gan hemt power semiconductor epitaxial wafer using si(100) growth substrate8 Oct 2026US 2026/0313942 A1Wavelord Co., Ltd
- Radiation hardened (rad-hard) devices including a superlattice reservoir layer and related methods24 Sep 2026US 2026/0293250 A1Atomera Incorporated
- Radiation hardened (rad-hard) devices including superlattice to control boron doping profile and related methods24 Sep 2026US 2026/0293251 A1Atomera Incorporated
- Group iii-n devices with buffer structures and methods of manufacturing the same3 Sep 2026US 2026/0262241 A1
- Buried-channel semiconductor heterostructures with enhanced band offset3 Sep 2026US 2026/0262270 A1Technische Universiteit Delft
Most cited
By later US patents
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates525US 7,521,292 B2The Board of Trustees of the University of Illinois · 2009
- Release strategies for making transferable semiconductor structures, devices and device components321US 7,932,123 B2The Board of Trustees of the University of Illinois · 2011
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates309US 8,198,621 B2The Board of Trustees of the University of Illinois · 2012
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates272US 8,754,396 B2The Board of Trustees of the University of Illinois · 2014
- Field effect devices having short period superlattice structures using Si and Ge261US 5,357,119 AThe Board of Regents of the University of California · 1994