Co-integrated resonant tunneling diode and high-electron mobility transistor

A semiconductor device comprising:

• a substrate;
• a buffer layer on the substrate;
• and
• a resonant tunneling diode (RTD) and a high-electron-mobility transistor (HEMT) that are co-integrated along the substrate,
• wherein the RTD is directly adjacent to the HEMT,
• wherein the HEMT comprises a first group of layers stacked on the buffer layer,
• wherein the first group of layers comprise a channel layer, a barrier layer, a source cap layer and a drain cap layer,
• wherein the first group of layers is stacked vertically in a normal direction from a surface of the buffer layer, and
• wherein the RTD comprises a second group of layers stacked on a dielectric layer that is parallel to the surface of the buffer layer,
• wherein the second group of layers is not in direct contact with the channel layer and the barrier layer,
• wherein the second group of layers is stacked horizontally in a parallel direction to the surface of the buffer layer,
• wherein a layer at one end of the first group of layers of the HEMT is directly adjacent to a layer at one end of the second group of layers of the RTD, and
• wherein the dielectric layer is directly adjacent to the layer at the one end of the first group of layers of the HEMT.