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US 2026/0262270 A1Published application
Buried-channel semiconductor heterostructures with enhanced band offset
AssigneeTechnische Universiteit Delft
InventorsGiordano Scappucci, Alberto Tosato
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Abstract
Buried quantum well semiconductor heterostructures are described comprising: a strained quantum well layer provided over a base layer, an inorganic dielectric layer, preferably an oxide layer, provided over the quantum well layer; and, a barrier layer provided between the quantum well layer and the oxide layer, wherein the barrier layer includes a strained semiconductor superlattice for increasing the band offset in the barrier layer.
Claims17
A buried quantum well semiconductor heterostructure comprising:
- a strained quantum well layer provided over a base layer;
- an oxide layer provided over the quantum well layer;
- a conductive layer provided over the oxide layer;
- and
- a SiGe barrier layer provided between the strained quantum well layer and the oxide layer, the barrier layer including a plurality of highly strained semiconductor layers, each highly strained semiconductor layer having a thickness smaller than 5 nm;
- wherein the strained quantum well layer is a strained Si quantum well layer or a strained Ge quantum well layer and the plurality of highly strained semiconductor layers are highly strained Ge layers or highly strained Si layers respectively, wherein a strain of a highly strained semiconducting layer has an absolute value of larger than 2%.
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A semiconductor device comprising a buried quantum well semiconductor heterostructure comprising:
- a strained quantum well laver provided over a base layer;
- an oxide layer provided over the quantum well layer;
- a conductive layer provided over the oxide layer;
- and
- a SiGe barrier layer provided between the strained quantum well layer and the oxide laver, the barrier laver including a plurality of highly strained semiconductor layers, each highly strained semiconductor layer having a thickness smaller than 5 nm:
- wherein the strained quantum well layer is a strained Si quantum well layer or a strained Ge quantum well layer and the plurality of highly strained semiconductor layers are highly strained Ge layers or highly strained Si layers respectively, wherein a strain of a highly strained semiconducting laver has an absolute value of larger than 2%.
3 more elements
Dependencies are inferred from the claim text.