H10D 62/112
For preventing surface leakage due to surface inversion layers
Official title: {for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers}
H10D62/112 (For preventing surface leakage due to surface inversion layers) appears on 1,258 US grants and 1,308 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,258
- Published applications
- 1,308
- Assignees
- 277
- Inventors
- 1,885
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 14 | 0 |
| 1978 | 6 | 0 |
| 1979 | 8 | 0 |
| 1980 | 6 | 0 |
| 1981 | 11 | 0 |
| 1982 | 4 | 0 |
| 1983 | 12 | 0 |
| 1984 | 11 | 0 |
| 1985 | 11 | 0 |
| 1986 | 12 | 0 |
| 1987 | 5 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 3 | 0 |
| 1991 | 5 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 6 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 11 | 0 |
| 1999 | 13 | 0 |
| 2000 | 7 | 0 |
| 2001 | 4 | 1 |
| 2002 | 6 | 7 |
| 2003 | 6 | 5 |
| 2004 | 3 | 4 |
| 2005 | 7 | 11 |
| 2006 | 5 | 18 |
| 2007 | 12 | 20 |
| 2008 | 10 | 28 |
| 2009 | 14 | 30 |
| 2010 | 25 | 40 |
| 2011 | 26 | 41 |
| 2012 | 33 | 41 |
| 2013 | 47 | 50 |
| 2014 | 61 | 74 |
| 2015 | 76 | 89 |
| 2016 | 100 | 102 |
| 2017 | 85 | 105 |
| 2018 | 91 | 84 |
| 2019 | 80 | 92 |
| 2020 | 75 | 86 |
| 2021 | 86 | 73 |
| 2022 | 59 | 76 |
| 2023 | 49 | 74 |
| 2024 | 41 | 59 |
| 2025 | 59 | 60 |
| 2026 | 21 | 38 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Superjunction silicon carbide semiconductor device having trench gate structures formed on stacked layers of parallel pn junctions extending in different directions and method thereof4 Aug 2026US 12,701,753 B2Fuji Electric Co., Ltd.
- Semiconductor structure and method of manufacturing the same1 Oct 2026US 2026/0304751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof17 Sep 2026US 2026/0282465 A1Kioxia Corporation
- Silicon carbide semiconductor device27 Aug 2026US 2026/0255631 A1Fuji Electric Co., Ltd.
- Method of manufacturing a power diode20 Aug 2026US 2026/0247641 A1STMicroelectronics International N. V.
- Buried p+ epitaxial layers for robust isolation in high-voltage bipolar-cmos-dmos devices20 Aug 2026US 2026/0247669 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Implementation of surface sensitive semiconductor devices201US 4,009,483 AMotorola, Inc. · 1977
- Structure to provide effective channel-stop in termination areas for trenched power transistors170US 5,877,528 AMegaMOS Corporation · 1999
- Method of fabricating an integrated circuit having punch-through suppression128US 6,221,724 B1Advanced Micro Devices, Inc. · 2001
- BICDMOS structures126US 5,426,328 ASiliconix Incorporated · 1995
- Vertical semiconductor devices including superlattice punch through stop layer and related methods112US 9,275,996 B2Mears Technologies, Inc. · 2016