H10D 62/102
Constructional design considerations for preventing surface leakage or controlling electric field concentration
Official title: {Constructional design considerations for preventing surface leakage or controlling electric field concentration}
H10D62/102 (Constructional design considerations for preventing surface leakage or controlling electric field concentration) appears on 9,877 US grants and 11,875 published applications in this corpus.
Search patents in H10D- Granted patents
- 9,877
- Published applications
- 11,875
- Assignees
- 1,177
- Inventors
- 9,884
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 23 | 0 |
| 1977 | 22 | 0 |
| 1978 | 28 | 0 |
| 1979 | 17 | 0 |
| 1980 | 15 | 0 |
| 1981 | 17 | 0 |
| 1982 | 5 | 0 |
| 1983 | 21 | 0 |
| 1984 | 17 | 0 |
| 1985 | 14 | 0 |
| 1986 | 22 | 0 |
| 1987 | 24 | 0 |
| 1988 | 18 | 0 |
| 1989 | 23 | 0 |
| 1990 | 27 | 0 |
| 1991 | 26 | 0 |
| 1992 | 31 | 0 |
| 1993 | 20 | 0 |
| 1994 | 28 | 0 |
| 1995 | 27 | 0 |
| 1996 | 35 | 0 |
| 1997 | 29 | 0 |
| 1998 | 50 | 0 |
| 1999 | 54 | 0 |
| 2000 | 57 | 0 |
| 2001 | 63 | 47 |
| 2002 | 79 | 113 |
| 2003 | 119 | 129 |
| 2004 | 130 | 149 |
| 2005 | 118 | 156 |
| 2006 | 108 | 195 |
| 2007 | 126 | 205 |
| 2008 | 120 | 245 |
| 2009 | 152 | 284 |
| 2010 | 256 | 269 |
| 2011 | 245 | 328 |
| 2012 | 250 | 374 |
| 2013 | 363 | 482 |
| 2014 | 516 | 663 |
| 2015 | 654 | 755 |
| 2016 | 722 | 794 |
| 2017 | 727 | 727 |
| 2018 | 679 | 662 |
| 2019 | 628 | 670 |
| 2020 | 614 | 618 |
| 2021 | 527 | 564 |
| 2022 | 433 | 612 |
| 2023 | 382 | 709 |
| 2024 | 395 | 664 |
| 2025 | 465 | 710 |
| 2026 | 356 | 751 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
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- Deep learning assisted textile sensor matrix for co-adaptive human-robot collaboration8 Oct 2026US 2026/0310292 A1Purdue Research Foundation
- Semiconductor device8 Oct 2026US 2026/0312580 A1Fuji Electric Co., Ltd.
- Method for forming memory device8 Oct 2026US 2026/0313870 A1National Taiwan University
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High-quality e-mode gan hemt power semiconductor epitaxial wafer using si(100) growth substrate8 Oct 2026US 2026/0313942 A1Wavelord Co., Ltd
Most cited
By later US patents
- Semiconductor power devices with alternating conductivity type high-voltage breakdown regions484US 5,216,275 AUniversity of Electronic Science and Technology of China · 1993
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Power MOSFET369US 5,438,215 ASiemens Aktiengesellschaft · 1995
- Monolithic three dimensional array of charge storage devices containing a planarized surface361US 6,881,994 B2Matrix Semiconductor, Inc. · 2005