H10D 62/103
For increasing or controlling the breakdown voltage of reverse-biased devices
Official title: {for increasing or controlling the breakdown voltage of reverse-biased devices}
H10D62/103 (For increasing or controlling the breakdown voltage of reverse-biased devices) appears on 8,988 US grants and 10,686 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,988
- Published applications
- 10,686
- Assignees
- 1,056
- Inventors
- 8,114
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 14 | 0 |
| 1977 | 8 | 0 |
| 1978 | 17 | 0 |
| 1979 | 10 | 0 |
| 1980 | 10 | 0 |
| 1981 | 8 | 0 |
| 1982 | 1 | 0 |
| 1983 | 11 | 0 |
| 1984 | 7 | 0 |
| 1985 | 3 | 0 |
| 1986 | 10 | 0 |
| 1987 | 19 | 0 |
| 1988 | 16 | 0 |
| 1989 | 21 | 0 |
| 1990 | 24 | 0 |
| 1991 | 21 | 0 |
| 1992 | 30 | 0 |
| 1993 | 19 | 0 |
| 1994 | 23 | 0 |
| 1995 | 24 | 0 |
| 1996 | 32 | 0 |
| 1997 | 25 | 0 |
| 1998 | 44 | 0 |
| 1999 | 45 | 0 |
| 2000 | 53 | 0 |
| 2001 | 59 | 47 |
| 2002 | 77 | 108 |
| 2003 | 115 | 124 |
| 2004 | 127 | 148 |
| 2005 | 115 | 151 |
| 2006 | 105 | 187 |
| 2007 | 122 | 196 |
| 2008 | 115 | 230 |
| 2009 | 145 | 269 |
| 2010 | 244 | 256 |
| 2011 | 234 | 319 |
| 2012 | 244 | 365 |
| 2013 | 351 | 457 |
| 2014 | 494 | 623 |
| 2015 | 619 | 697 |
| 2016 | 658 | 719 |
| 2017 | 652 | 656 |
| 2018 | 622 | 613 |
| 2019 | 582 | 614 |
| 2020 | 559 | 560 |
| 2021 | 475 | 514 |
| 2022 | 393 | 537 |
| 2023 | 333 | 621 |
| 2024 | 335 | 585 |
| 2025 | 409 | 587 |
| 2026 | 309 | 503 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
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- Power semiconductor device including a semiconductor layer based on silicon carbide29 Sep 2026US 12,751,042 B2Hyundai Mobis Co., Ltd.
- Deep learning assisted textile sensor matrix for co-adaptive human-robot collaboration8 Oct 2026US 2026/0310292 A1Purdue Research Foundation
- Semiconductor device8 Oct 2026US 2026/0312580 A1Fuji Electric Co., Ltd.
- Method for forming memory device8 Oct 2026US 2026/0313870 A1National Taiwan University
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon carbide semiconductor device8 Oct 2026US 2026/0313956 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Semiconductor power devices with alternating conductivity type high-voltage breakdown regions484US 5,216,275 AUniversity of Electronic Science and Technology of China · 1993
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Power MOSFET369US 5,438,215 ASiemens Aktiengesellschaft · 1995
- Monolithic three dimensional array of charge storage devices containing a planarized surface361US 6,881,994 B2Matrix Semiconductor, Inc. · 2005