H10D 62/105
By having particular doping profiles, shapes or arrangements of pn junctions
Official title: {by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] (IGFETs having LDD or drain extension regions H10D30/601)}
H10D62/105 (By having particular doping profiles, shapes or arrangements of pn junctions) appears on 8,517 US grants and 10,169 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,517
- Published applications
- 10,169
- Assignees
- 987
- Inventors
- 7,589
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 4 | 0 |
| 1978 | 11 | 0 |
| 1979 | 8 | 0 |
| 1980 | 3 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 8 | 0 |
| 1984 | 5 | 0 |
| 1985 | 3 | 0 |
| 1986 | 9 | 0 |
| 1987 | 14 | 0 |
| 1988 | 15 | 0 |
| 1989 | 19 | 0 |
| 1990 | 19 | 0 |
| 1991 | 16 | 0 |
| 1992 | 24 | 0 |
| 1993 | 17 | 0 |
| 1994 | 20 | 0 |
| 1995 | 22 | 0 |
| 1996 | 31 | 0 |
| 1997 | 22 | 0 |
| 1998 | 40 | 0 |
| 1999 | 38 | 0 |
| 2000 | 48 | 0 |
| 2001 | 56 | 45 |
| 2002 | 73 | 107 |
| 2003 | 115 | 119 |
| 2004 | 123 | 136 |
| 2005 | 108 | 141 |
| 2006 | 96 | 179 |
| 2007 | 118 | 187 |
| 2008 | 109 | 222 |
| 2009 | 139 | 253 |
| 2010 | 231 | 242 |
| 2011 | 221 | 296 |
| 2012 | 232 | 345 |
| 2013 | 328 | 420 |
| 2014 | 463 | 596 |
| 2015 | 583 | 661 |
| 2016 | 626 | 689 |
| 2017 | 630 | 629 |
| 2018 | 586 | 594 |
| 2019 | 564 | 586 |
| 2020 | 540 | 546 |
| 2021 | 462 | 489 |
| 2022 | 378 | 512 |
| 2023 | 314 | 603 |
| 2024 | 321 | 564 |
| 2025 | 396 | 554 |
| 2026 | 298 | 454 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Schottky barrier diode6 Oct 2026US 12,757,419 B2Novel Crystal Technology, Inc.
- High electron mobility transistor with helping gate6 Oct 2026US 12,757,447 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- Power semiconductor device including a semiconductor layer based on silicon carbide29 Sep 2026US 12,751,042 B2Hyundai Mobis Co., Ltd.
- Electronic components employing field ionization29 Sep 2026US 12,751,052 B2Psiquantum, Corp.
- Deep learning assisted textile sensor matrix for co-adaptive human-robot collaboration8 Oct 2026US 2026/0310292 A1Purdue Research Foundation
- Method for forming memory device8 Oct 2026US 2026/0313870 A1National Taiwan University
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon carbide semiconductor device8 Oct 2026US 2026/0313956 A1Fuji Electric Co., Ltd.
- Semiconductor device and method of forming the same8 Oct 2026US 2026/0314051 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor power devices with alternating conductivity type high-voltage breakdown regions484US 5,216,275 AUniversity of Electronic Science and Technology of China · 1993
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Power MOSFET369US 5,438,215 ASiemens Aktiengesellschaft · 1995
- Monolithic three dimensional array of charge storage devices containing a planarized surface361US 6,881,994 B2Matrix Semiconductor, Inc. · 2005