H10D 62/109
Reduced surface field [resurf] pn junction structures
Official title: {Reduced surface field [RESURF] PN junction structures}
H10D62/109 (Reduced surface field [resurf] pn junction structures) appears on 3,386 US grants and 4,031 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,386
- Published applications
- 4,031
- Assignees
- 488
- Inventors
- 3,316
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 6 | 0 |
| 1999 | 7 | 0 |
| 2000 | 16 | 0 |
| 2001 | 23 | 27 |
| 2002 | 40 | 77 |
| 2003 | 77 | 77 |
| 2004 | 82 | 91 |
| 2005 | 58 | 77 |
| 2006 | 55 | 101 |
| 2007 | 67 | 105 |
| 2008 | 74 | 130 |
| 2009 | 80 | 125 |
| 2010 | 108 | 106 |
| 2011 | 118 | 143 |
| 2012 | 109 | 151 |
| 2013 | 158 | 198 |
| 2014 | 205 | 268 |
| 2015 | 257 | 248 |
| 2016 | 269 | 295 |
| 2017 | 275 | 243 |
| 2018 | 232 | 204 |
| 2019 | 202 | 201 |
| 2020 | 172 | 182 |
| 2021 | 139 | 151 |
| 2022 | 112 | 150 |
| 2023 | 100 | 201 |
| 2024 | 92 | 165 |
| 2025 | 117 | 166 |
| 2026 | 108 | 149 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- High voltage breakdown resistant bipolar transistor29 Sep 2026US 12,751,054 B2Newport Fab, LLC
- Cell structures of insulated gate bipolar transistor IGBT with a control gate and a carrier storage layer, and their manufacturing methods29 Sep 2026US 12,751,055 B2Nexperia B. V.
- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Method for forming a drift region of a superjunction device22 Sep 2026US 12,745,432 B2Infineon Technologies AG
- Hvic device with combined level shifter and boost diode in junction termination region1 Oct 2026US 2026/0303069 A1Alpha and Omega Semiconductor International LP
- Method for forming a superjunction device and superjunction device1 Oct 2026US 2026/0304852 A1
- Semiconductor device1 Oct 2026US 2026/0304857 A1Mitsubishi Electric Corporation
- Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator1 Oct 2026US 2026/0304858 A1Kabushiki Kaisha Toshiba
- Forming a superjunction device and superjunction device1 Oct 2026US 2026/0304859 A1Infineon Technologies Austria AG
Most cited
By later US patents
- Semiconductor power devices with alternating conductivity type high-voltage breakdown regions484US 5,216,275 AUniversity of Electronic Science and Technology of China · 1993
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Power MOSFET369US 5,438,215 ASiemens Aktiengesellschaft · 1995
- Field effect-controlled semiconductor component273US 6,184,555 B2Siemens Aktiengesellschaft · 2001
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008