Forming a superjunction device and superjunction device

A method for forming a superjunction device, the method comprising:

• forming a first superjunction region in an inner region of a semiconductor body, the first superjunction region comprising a plurality of first regions of a first doping type and a plurality of second regions of a second doping type complementary to the first doping type;
• forming a second superjunction region in an edge region of the semiconductor body, the second superjunction region comprising a plurality of third regions of the first doping type and a plurality of fourth regions of the second doping type;
• and
• forming a first termination region of the first doping type and a second termination region of the second doping type in the edge region,
• wherein forming the first superjunction region comprises:
• forming a plurality of first semiconductor layers one above the other, forming a second semiconductor layer on top of the first semiconductor layers, and implanting first type dopant atoms and second type dopant atoms into each of the plurality of first semiconductor layers and the second semiconductor layer after forming the respective first or second semiconductor layer and before forming a next one of the first semiconductor layers or the second semiconductor layer before forming a next one of the first semiconductor layers or the second semiconductor layer,
• wherein forming the second superjunction region comprises implanting first type dopant atoms and second type dopant atoms into each of the first semiconductor layers,
• wherein forming the first termination region comprises implanting first type dopant atoms into the second semiconductor layer to form at least one first implanted termination region, and
• wherein forming the second termination region comprises implanting second type dopant atoms into the second semiconductor layer to form at least one second implanted termination region.