Method for forming a superjunction device and superjunction device

A method for forming a superjunction device, the method comprising:

• forming a superjunction region, the superjunction region comprising a plurality of first regions of a first doping type and a plurality of second regions of a second doping type complementary to the first doping type,
• wherein forming the superjunction region comprises:
• forming a plurality of semiconductor layers one above the other to form a layer stack;
• implanting first type dopant atoms through openings of a first implantation mask in each of the semiconductor layers to form first implanted regions;
• implanting second type dopant atoms through openings of a second implantation mask in each of the semiconductor layers to form second implanted regions;
• and
• an annealing process to diffuse and activate the implanted first type dopant atoms and second type dopant atoms to form the superjunction region,
• wherein each of the first implantation mask and the second implantation mask has a pitch selected from between 3 micrometers and 5 micrometers, and
• wherein each of the semiconductor layers has a thickness selected from between 1.9 micrometers and 3.5 micrometers.