H10D 62/111
Multiple resurf structures
Official title: {Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures}
H10D62/111 (Multiple resurf structures) appears on 2,649 US grants and 3,118 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,649
- Published applications
- 3,118
- Assignees
- 414
- Inventors
- 2,620
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 6 | 0 |
| 2000 | 15 | 0 |
| 2001 | 22 | 27 |
| 2002 | 39 | 74 |
| 2003 | 74 | 76 |
| 2004 | 82 | 87 |
| 2005 | 57 | 75 |
| 2006 | 55 | 92 |
| 2007 | 61 | 99 |
| 2008 | 67 | 115 |
| 2009 | 74 | 110 |
| 2010 | 97 | 99 |
| 2011 | 112 | 125 |
| 2012 | 97 | 134 |
| 2013 | 141 | 173 |
| 2014 | 181 | 215 |
| 2015 | 192 | 194 |
| 2016 | 197 | 196 |
| 2017 | 192 | 160 |
| 2018 | 160 | 139 |
| 2019 | 138 | 144 |
| 2020 | 116 | 128 |
| 2021 | 97 | 103 |
| 2022 | 70 | 98 |
| 2023 | 71 | 147 |
| 2024 | 58 | 111 |
| 2025 | 81 | 106 |
| 2026 | 72 | 91 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for forming a drift region of a superjunction device22 Sep 2026US 12,745,432 B2Infineon Technologies AG
- Semiconductor device22 Sep 2026US 12,745,433 B2Fuji Electric Co., Ltd.
- Power diode device and method of manufacturing the same15 Sep 2026US 12,740,078 B2Diodes Incorporated
- Semiconductor device with a first parallel pn structure in the active region and a second parallel pn structure in the termination region wherein the depth of the second parallel structure becomes stepwise shallower towards the periphery8 Sep 2026US 12,733,218 B2Fuji Electric Co., Ltd.
- Semiconductor die having a drift region with a charge compensation region formed therein where the charge compensation region has a plurality of guard rings formed in a first and a second opposite doping type portions1 Sep 2026US 12,727,194 B2Wolfspeed, Inc.
- Method for forming a superjunction device and superjunction device1 Oct 2026US 2026/0304852 A1
- Forming a superjunction device and superjunction device1 Oct 2026US 2026/0304859 A1Infineon Technologies Austria AG
- Superjunction transistor device and method1 Oct 2026US 2026/0304860 A1Infineon Technologies Austria AG
- Field effect transistor1 Oct 2026US 2026/0304861 A1Denso Corporation
- Semiconductor device24 Sep 2026US 2026/0293229 A1Power Master Semiconductor Co., Ltd.
Most cited
By later US patents
- Semiconductor power devices with alternating conductivity type high-voltage breakdown regions484US 5,216,275 AUniversity of Electronic Science and Technology of China · 1993
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Power MOSFET369US 5,438,215 ASiemens Aktiengesellschaft · 1995
- Field effect-controlled semiconductor component273US 6,184,555 B2Siemens Aktiengesellschaft · 2001
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008