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US 12,740,078 B2Granted
Power diode device and method of manufacturing the same
AssigneeDiodes Incorporated
InventorsChing Chiu Tseng, Tzu Yuan Lo, Chao Yi Chang
Life of this patent
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Abstract
A power diode device includes a substrate. The substrate includes a core layer of a first conductive type, a first diffusion layer of the first conductive type, a second diffusion layer of a second conductive type, and a heavily doped region of the second conductive type. The core layer is located between the first diffusion layer and the second diffusion layer. A thickness of the core layer is greater than that of the second diffusion layer. The heavily doped region is located in the second diffusion layer and extends toward the core layer to form a PN junction between the heavily doped region and the core layer. A method for manufacturing the power diode device is also provided.
Claims20
A power diode device comprising a substrate, the substrate comprising:
- a first diffusion layer of a first conductivity type, the first diffusion layer comprising a first surface and a second surface opposite to each other, and the first surface of the first diffusion layer forming a bottom surface of the substrate;
- a second diffusion layer of a second conductivity type, the second diffusion layer comprising a first surface and a second surface opposite to each other, and the second surface of the second diffusion layer forming a top surface of the substrate;
- a core layer of the first conductivity type between the first diffusion layer and the second diffusion layer, the core layer comprising a first surface and a second surface opposite to each other, the first surface of the core layer facing the first diffusion layer, the second surface of the core layer facing the second diffusion layer, and a thickness of the core layer being greater than a thickness of the second diffusion layer;
- a heavily doped region of the second conductivity type in the second diffusion layer and extending toward the core layer, the heavily doped region comprising a first surface and a second surface opposite to each other, the second surface of the heavily doped region being coplanar with the second surface of the second diffusion surface, the first surface of the heavily doped region reaching the second surface of the core layer or reaching in-between the first surface of the core layer and the second surface of the core layer without reaching the first surface of the core layer, with a first PN junction formed between the heavily doped region and the core layer;
- and
- a first electrode layer, disposed on the top surface of the substrate without covering the second diffusion layer, the first electrode layer being in contact with the heavily doped region.
3 more elements
A power diode comprising:
- a first diffusion layer of a first conductivity type in a substrate, the first diffusion layer comprising a first surface and a second surface opposite to each other, and the first surface of the first diffusion layer being a bottom surface of the substrate;
- a second diffusion layer of a second conductivity type in the substrate, the second diffusion layer comprising a first surface and a second surface opposite to each other, and the second surface of the second diffusion layer being a top surface of the substrate;
- a core layer of the first conductivity type between the first diffusion layer and the second diffusion layer, the core layer comprising a first surface and a second surface opposite to each other, the first surface of the core layer facing the first diffusion layer, and the second surface of the core layer facing the second diffusion layer;
- a heavily doped region of the second conductivity type in the second diffusion layer, the heavily doped region extending into the core layer without reaching the first surface of the core layer, with a first PN junction formed between the heavily doped region and the core layer;
- an isolation structure in the substrate and separated from the heavily doped region by the second diffusion layer;
- and
- a first electrode layer, disposed on the top surface of the substrate without covering the second diffusion layer, the first electrode layer being in contact with the heavily doped region.
4 more elements
A power diode device comprising:
- a first diffusion layer of a first conductivity type;
- a core layer of the first conductivity type on the first diffusion layer;
- a second diffusion layer of a second conductivity type on the core layer, the second diffusion layer having a first surface facing away from the core layer, and first diffusion layer having a second surface facing away from the core layer;
- a heavily doped region of the second conductivity type, extending from the first surface toward the core layer and through the second diffusion layer;
- and
- a first electrode layer, disposed on the heavily doped region without covering the second diffusion layer, the first electrode layer being in contact with a portion of the heavily doped region;
- wherein a first PN junction formed between the heavily doped region and the core layer, and a second PN junction is formed between the core layer and the second diffusion layer.
4 more elements
Dependencies are inferred from the claim text.