Semiconductor die having a drift region with a charge compensation region formed therein where the charge compensation region has a plurality of guard rings formed in a first and a second opposite doping type portions

A semiconductor die comprising:

• a drift region having a first doping type;
• an active region in the drift region;
• and
• an edge termination region surrounding the active region in the drift region, the edge termination region comprising:
• a charge compensation region in the drift region, the charge compensation region having a first portion that has a second doping type that is opposite the first doping type and a first doping concentration and a second portion that has the first doping type;
• and
• a plurality of guard rings in the charge compensation region, the plurality of guard rings having the second doping type and a second doping concentration that is greater than the first doping concentration, wherein at least a first of the guard rings is within the first portion of the charge compensation region and at least a second of the guard rings is within the second portion of the charge compensation region,
• wherein the entirety of the second portion of the charge compensation region is doped with both first doping type dopants and second doping type dopants.