Semiconductor device

A semiconductor device comprising:

• a first semiconductor layer having an N conductivity type;
• and
• a second semiconductor layer formed on the first semiconductor layer and including an active region, a frame region, and a termination region,
• wherein the active region includes a plurality of first P pillars and first N pillars formed between the plurality of first P pillars, and the frame region includes a plurality of second P pillars and second N pillars formed between the plurality of second P pillars, and
• the termination region includes a first surface termination layer having a P conductivity type and formed to extend in a first direction, a second surface termination layer having an N conductivity type and formed to extend in the first direction under the first surface termination layer, a first low-concentration termination layer having a P conductivity type and formed to extend in the first direction under the second surface termination layer, a second low-concentration termination layer having an N conductivity type and formed to extend in the first direction under the first low-concentration termination layer, a third low-concentration termination layer having a P conductivity type and formed to extend in the first direction under the second surface termination layer, and a fourth low-concentration termination layer having an N conductivity type and formed to extend in the first direction under the third low-concentration termination layer, and
• the first surface termination layer is formed on a top surface of the second semiconductor layer in the termination region.