H10D 62/106
Having supplementary regions doped oppositely to or in rectifying contact with regions
Official title: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
H10D62/106 (Having supplementary regions doped oppositely to or in rectifying contact with regions) appears on 5,316 US grants and 6,652 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,316
- Published applications
- 6,652
- Assignees
- 731
- Inventors
- 5,680
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 5 | 0 |
| 1980 | 1 | 0 |
| 1981 | 3 | 0 |
| 1982 | 0 | 0 |
| 1983 | 5 | 0 |
| 1984 | 4 | 0 |
| 1985 | 3 | 0 |
| 1986 | 7 | 0 |
| 1987 | 10 | 0 |
| 1988 | 9 | 0 |
| 1989 | 7 | 0 |
| 1990 | 6 | 0 |
| 1991 | 9 | 0 |
| 1992 | 15 | 0 |
| 1993 | 8 | 0 |
| 1994 | 12 | 0 |
| 1995 | 10 | 0 |
| 1996 | 17 | 0 |
| 1997 | 10 | 0 |
| 1998 | 22 | 0 |
| 1999 | 21 | 0 |
| 2000 | 24 | 0 |
| 2001 | 34 | 19 |
| 2002 | 36 | 50 |
| 2003 | 44 | 52 |
| 2004 | 62 | 53 |
| 2005 | 54 | 67 |
| 2006 | 39 | 77 |
| 2007 | 52 | 78 |
| 2008 | 41 | 106 |
| 2009 | 54 | 126 |
| 2010 | 121 | 133 |
| 2011 | 115 | 151 |
| 2012 | 123 | 197 |
| 2013 | 178 | 214 |
| 2014 | 257 | 337 |
| 2015 | 337 | 428 |
| 2016 | 388 | 445 |
| 2017 | 399 | 422 |
| 2018 | 380 | 429 |
| 2019 | 378 | 403 |
| 2020 | 378 | 400 |
| 2021 | 346 | 370 |
| 2022 | 282 | 391 |
| 2023 | 230 | 450 |
| 2024 | 256 | 444 |
| 2025 | 305 | 458 |
| 2026 | 205 | 352 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Schottky barrier diode6 Oct 2026US 12,757,419 B2Novel Crystal Technology, Inc.
- High electron mobility transistor with helping gate6 Oct 2026US 12,757,447 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Power semiconductor device including a semiconductor layer based on silicon carbide29 Sep 2026US 12,751,042 B2Hyundai Mobis Co., Ltd.
- Electronic components employing field ionization29 Sep 2026US 12,751,052 B2Psiquantum, Corp.
- Merged-PiN Schottky (MPS) diode having non-uniformly spaced wells, and a method for manufacturing the same22 Sep 2026US 12,745,409 B2Nexperia B. V.
- Deep learning assisted textile sensor matrix for co-adaptive human-robot collaboration8 Oct 2026US 2026/0310292 A1Purdue Research Foundation
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon carbide semiconductor device8 Oct 2026US 2026/0313956 A1Fuji Electric Co., Ltd.
- Semiconductor device and method of forming the same8 Oct 2026US 2026/0314051 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Germanium layer for power mosfet1 Oct 2026US 2026/0304827 A1Microchip Technology Incorporated
Most cited
By later US patents
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Field effect-controlled semiconductor component273US 6,184,555 B2Siemens Aktiengesellschaft · 2001
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Silicon carbide power MOSFET with floating field ring and floating field plate237US 5,233,215 ANorth Carolina State University at Raleigh · 1993
- High-voltage transistor with multi-layer conduction region222US 6,207,994 B1Power Integrations, Inc. · 2001