H10D 62/107
Buried supplementary regions
Official title: {Buried supplementary regions, e.g. buried guard rings (multi-RESURF H10D62/111)}
H10D62/107 (Buried supplementary regions) appears on 2,002 US grants and 2,799 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,002
- Published applications
- 2,799
- Assignees
- 366
- Inventors
- 2,608
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 4 | 0 |
| 2000 | 8 | 0 |
| 2001 | 10 | 6 |
| 2002 | 9 | 5 |
| 2003 | 11 | 9 |
| 2004 | 3 | 5 |
| 2005 | 10 | 14 |
| 2006 | 6 | 19 |
| 2007 | 9 | 25 |
| 2008 | 10 | 36 |
| 2009 | 18 | 51 |
| 2010 | 42 | 41 |
| 2011 | 41 | 31 |
| 2012 | 38 | 59 |
| 2013 | 47 | 60 |
| 2014 | 69 | 105 |
| 2015 | 109 | 135 |
| 2016 | 129 | 155 |
| 2017 | 161 | 184 |
| 2018 | 145 | 193 |
| 2019 | 170 | 186 |
| 2020 | 157 | 202 |
| 2021 | 155 | 163 |
| 2022 | 131 | 201 |
| 2023 | 122 | 231 |
| 2024 | 134 | 226 |
| 2025 | 146 | 243 |
| 2026 | 102 | 214 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- SiC VJFET with edge termination for dual tilted gate implants15 Sep 2026US 12,740,107 B2Wolfspeed, Inc.
- Semiconductor device and power conversion device8 Sep 2026US 12,733,235 B2Minebea Power Semiconductor Device Inc.
- Electrostatic discharge circuitry for a high-voltage semiconductor device1 Sep 2026US 12,727,182 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure with backside pick-up region and method of manufacturing the same1 Sep 2026US 12,727,211 B2Nanya Technology Corporation
- Silicon carbide semiconductor device25 Aug 2026US 12,720,832 B2Fuji Electric Co., Ltd.
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon carbide semiconductor device8 Oct 2026US 2026/0313956 A1Fuji Electric Co., Ltd.
- Semiconductor device1 Oct 2026US 2026/0304828 A1Rohm Co., Ltd.
- Power device and manufacturing method thereof1 Oct 2026US 2026/0304829 A1Chongqing Simic Semiconductor Limited
- Semiconductor device1 Oct 2026US 2026/0304830 A1Denso Corporation
Most cited
By later US patents
- Field effect-controlled semiconductor component273US 6,184,555 B2Siemens Aktiengesellschaft · 2001
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Power metal-oxide-semiconductor field effect transistor172US 5,168,331 ASiliconix Incorporated · 1992
- High voltage mosfet structure161US 6,081,009 AIntersil Corporation · 2000
- Semiconductor device157US 6,037,632 AKabushiki Kaisha Toshiba · 2000