Semiconductor device and power conversion device

A semiconductor device comprising:

• a floating field-limiting layer provided in a termination region;
• and
• a field plate electrically connected to the field-limiting layer,
• wherein
• the field plate is made of polysilicon,
• the field plate and the field-limiting layer are connected via an aluminum (Al) electrode,
• a plurality of the field-limiting layers, a plurality of the field plates, and a plurality of the Al electrodes are disposed,
• the plurality of the Al electrodes constitutes an electrode group in which adjacent Al electrodes are arranged alternately to prevent the Al electrodes from being aligned on a straight line when an upper surface of the semiconductor device is viewed,
• for each Al electrode of the plurality of the Al electrodes, the field-limiting layer and the Al electrode are connected by a contact different from a contact by which the field plate and the Al electrode are connected,
• for each Al electrode of the plurality of the Al electrodes, a number of the contact by which the field-limiting layer and the Al electrode are connected is only one, and a number of the contact by which the field plate and the Al electrode are connected is only one, and
• for each Al electrode of the plurality of the Al electrodes, the contact by which the field-limiting layer and the Al electrode are connected and the contact by which the field plate and the Al electrode are connected are aligned in a direction perpendicular to a direction in which the field plate extends when the upper surface of the semiconductor device is viewed.