Germanium layer for power mosfet
AssigneeMicrochip Technology Incorporated
InventorShesh Mani Pandey
Life of this patent
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Abstract
A MOSFET comprises an epitaxial region, a JFET neck region of the epitaxial region, a gate, and a germanium layer of the epitaxial region. The epitaxial region includes a top, an opposite bottom spaced vertically from the top, a first side, and a laterally opposite second side spaced from the first side. The JFET neck region is between the first and second sides. The gate is adjacent the top. The JFET neck region underlies at least a portion of the gate. The germanium layer is adjacent the top and underlies at least a portion of the gate.
Claims20
A metal-oxide semiconductor field-effect transistor (MOSFET), comprising:
- an epitaxial region including a top, an opposite bottom spaced vertically from the top, a first side, and a laterally opposite second side spaced from the first side;
- a junction field-effect transistor (JFET) neck region of the epitaxial region located between the first and second sides;
- a gate adjacent the top, the JFET neck region underlying at least a portion of the gate;
- and
- a germanium layer of the epitaxial region adjacent the top and underlying at least the portion of the gate.
A metal-oxide semiconductor field-effect transistor (MOSFET), comprising:
- an epitaxial region including a top, an opposite bottom spaced vertically from the top, a first side, and a laterally opposite second side spaced from the first side;
- a junction field-effect transistor (JFET) neck region of the epitaxial region located between the first and second sides;
- a gate located adjacent the top, the gate comprising a gate dielectric including a central thickened dielectric portion having a greater thickness than outer remaining portions of the gate dielectric, the JFET neck region underlying the central thickened dielectric portion;
- and
- a germanium layer of the epitaxial region adjacent the top and extending laterally across an upper portion of the JFET neck region.
A method of making a metal-oxide semiconductor field-effect transistor (MOSFET) using an epitaxial region on a drain substrate, the epitaxial region including a top, an opposite bottom spaced vertically from the top, a first side, a laterally opposite second side spaced from the first side, and a junction field-effect transistor (JFET) neck region adjacent the top between the first and second sides, the method comprising:
- forming laterally spaced first and second wells of the epitaxial region adjacent the top, the first and second wells forming respective innermost junctions with the JFET neck region, the JFET neck region extending between the respective innermost junctions;
- forming a germanium layer of the epitaxial region adjacent the top, the germanium layer extending continuously between the respective innermost junctions;
- and
- forming a gate adjacent the top, the gate comprising a gate dielectric.
Dependencies are inferred from the claim text.