Merged-PiN Schottky (MPS) diode having non-uniformly spaced wells, and a method for manufacturing the same

A method for manufacturing a merged PIN Schottky (MPS) diode, the method comprising:

• providing a semiconductor body comprising a drift region of a first conductivity type;
• forming a plurality of wells of a second conductivity type different from the first conductivity type in the drift region, wherein the plurality of wells are mutually spaced apart, each well forming a respective PN-junction with the drift region, and a spacing between adjacently arranged wells increases in an outward direction from a center of the active area;
• arranging a metal layer assembly on a surface of the semiconductor body, wherein the metal layer assembly comprises at least one metal layer, and wherein the metal layer assembly forms a plurality of Schottky contacts together with the drift region and a plurality of respective Ohmic contacts with the plurality of wells;
• and
• wherein the drift region comprises a doped region surrounding the plurality of wells and has a dopant concentration greater than that of a remainder of the drift region, and a dopant profile of the doped region is configured so that, for wells of each pair of adjacently arranged wells, the doped region between the wells becomes depleted at substantially a same voltage applied to the MPS diode.