H10D 62/108
Having localised breakdown regions
Official title: {having localised breakdown regions, e.g. built-in avalanching regions (in self-protected thyristors H10D18/211)}
H10D62/108 (Having localised breakdown regions) appears on 252 US grants and 251 published applications in this corpus.
Search patents in H10D- Granted patents
- 252
- Published applications
- 251
- Assignees
- 123
- Inventors
- 456
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 3 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 5 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 4 | 2 |
| 2002 | 2 | 2 |
| 2003 | 3 | 2 |
| 2004 | 1 | 3 |
| 2005 | 3 | 1 |
| 2006 | 3 | 4 |
| 2007 | 2 | 8 |
| 2008 | 2 | 6 |
| 2009 | 5 | 13 |
| 2010 | 12 | 10 |
| 2011 | 7 | 11 |
| 2012 | 11 | 20 |
| 2013 | 11 | 14 |
| 2014 | 21 | 24 |
| 2015 | 19 | 14 |
| 2016 | 17 | 16 |
| 2017 | 14 | 11 |
| 2018 | 12 | 16 |
| 2019 | 16 | 8 |
| 2020 | 10 | 9 |
| 2021 | 6 | 7 |
| 2022 | 12 | 11 |
| 2023 | 5 | 13 |
| 2024 | 6 | 7 |
| 2025 | 8 | 12 |
| 2026 | 4 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Method for forming memory device11 Aug 2026US 12,707,625 B2National Taiwan University
- Avalanche-protected transistors using a bottom breakdown current path and methods of forming the same14 Jul 2026US 12,684,826 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Insulated gate semiconductor device24 Feb 2026US 12,563,792 B2Fuji Electric Co., Ltd.
- Semiconductor apparatus18 Nov 2025US 12,476,153 B2Mitsubishi Electric Corporation
- Method for forming memory device8 Oct 2026US 2026/0313870 A1National Taiwan University
- Semiconductor device6 Aug 2026US 2026/0231452 A1Kabushiki Kaisha Toshiba
- Electrostatic discharge semiconductor device and method for manufacturing the same, integrated circuit25 Jun 2026US 2026/0182046 A1Joulwatt Technology Co., Ltd.
- Semiconductor structure4 Jun 2026US 2026/0156861 A1Mediatek Inc.
- Zener diode and manufacturing method26 Mar 2026US 2026/0090036 A1Panstar Semiconductor Co., Ltd.
Most cited
By later US patents
- Monolithic three dimensional array of charge storage devices containing a planarized surface361US 6,881,994 B2Matrix Semiconductor, Inc. · 2005
- Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer183US 5,814,858 ASiliconix Incorporated · 1998
- Silicon carbide semiconductor device and manufacturing method thereof168US 6,057,558 ADenson Corporation · 2000
- Dense arrays and charge storage devices166US 7,129,538 B2SanDisk 3D LLC · 2006
- Circuit structure with enhanced electrostatic discharge protection98US 4,939,616 ATexas Instruments Incorporated · 1990