Semiconductor apparatus

A semiconductor apparatus comprising:

• a semiconductor substrate of a first conductivity type including a device region in which a semiconductor device is provided;
• a diffusion layer of a second conductivity type provided on a surface of the semiconductor substrate at an outer periphery of the device region;
• a first trench provided on the surface of the semiconductor substrate at the outer periphery of the device region, positioned on an inner side of the diffusion layer in the semiconductor substrate and separate from and adjacent to the diffusion layer;
• a channel stopper electrode electrically connected to the first trench;
• a monitor electrode electrically connected to the diffusion layer and separate from the channel stopper electrode;
• and
• an insulating film covering an inner edge portion of the monitor electrode and an outer edge portion of the channel stopper electrode,
• wherein the inner edge portion of the monitor electrode is positioned between the diffusion layer and the first trench,
• a distance between the outer edge portion of the channel stopper electrode and the inner edge portion of the monitor electrode is a first distance,
• a distance between the diffusion layer and the first trench is a second distance, and
• the first and second distances are set so that a discharge voltage between the channel stopper electrode and the monitor electrode becomes greater than an avalanche breakdown voltage at a PN junction portion of the diffusion layer and the semiconductor substrate.