US 2026/0156861 A1 · SEMICONDUCTOR STRUCTURE

Abstract

A semiconductor structure includes a drift region formed in the substrate and having a first conductivity type. The semiconductor structure includes a body region formed in the substrate and having a second conductivity type different from the first conductivity type. The semiconductor structure includes a gate structure formed over the drift region and adjacent to the body region, and a drain region formed in the drift region and having the first conductivity type. The semiconductor structure includes a source region formed in the body region and having the first conductivity type, and a first well region adjacent to the drift region. The first well region has the first conductivity type. A second well region is adjacent to the first well region, and the second well region has the second conductivity type. The first well region is in direct contact with the second well region.

Claims20

Dependent claims

A semiconductor structure, comprising:

a substrate;
a drift region formed in the substrate and having a first conductivity type;
a body region formed in the substrate and having a second conductivity type different from the first conductivity type;
a gate structure formed over the drift region and adjacent to the body region;
a drain region formed in the drift region and having the first conductivity type;
a source region formed in the body region and having the first conductivity type;
a first well region adjacent to the drift region, wherein the first well region has the first conductivity type;
and
a second well region adjacent to the first well region, wherein the second well region has the second conductivity type, and the first well region is in direct contact with the second well region.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor structure

Life of this patent

Semiconductor structure

Life of this patent

Abstract

Claims20