H10D 30/798
Being provided in or under the channel regions
Official title: {being provided in or under the channel regions}
H10D30/798 (Being provided in or under the channel regions) appears on 1,702 US grants and 1,840 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,702
- Published applications
- 1,840
- Assignees
- 218
- Inventors
- 1,793
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 3 |
| 2002 | 10 | 19 |
| 2003 | 18 | 34 |
| 2004 | 42 | 70 |
| 2005 | 59 | 127 |
| 2006 | 68 | 85 |
| 2007 | 65 | 90 |
| 2008 | 65 | 89 |
| 2009 | 62 | 66 |
| 2010 | 67 | 43 |
| 2011 | 66 | 57 |
| 2012 | 45 | 56 |
| 2013 | 66 | 66 |
| 2014 | 57 | 89 |
| 2015 | 111 | 148 |
| 2016 | 161 | 190 |
| 2017 | 180 | 153 |
| 2018 | 140 | 115 |
| 2019 | 110 | 75 |
| 2020 | 87 | 86 |
| 2021 | 63 | 38 |
| 2022 | 36 | 39 |
| 2023 | 45 | 47 |
| 2024 | 28 | 31 |
| 2025 | 32 | 14 |
| 2026 | 11 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
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- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- FinFET with high mobility and strain channel582US 8,729,634 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- In-situ doping of arsenic for source and drain epitaxy548US 8,962,400 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015