Complementary metal-oxide-semiconductor field effect device

A complementary metal-oxide-semiconductor (CMOS) field effect device comprising:

• a substrate;
• a first n-doped source/drain (S/D) region and a second n-doped S/D region arranged above the substrate;
• a first p-doped S/D region and a second p-doped S/D region arranged above the substrate;
• a first channel layer arranged above the substrate, the first channel layer comprising:
• a first sub-layer and a second sub-layer;
• wherein the first and second n-doped S/D regions are arranged at a first lateral side of the first channel layer, and the first and second p-doped S/D regions are arranged at a second lateral side of the first channel layer, the second lateral side being opposite to the first lateral side;
• wherein the first and second n-doped S/D regions abut the first sub-layer and not abut the second sub-layer;
• wherein the first and second p-doped S/D regions abut the second sub-layer and not abut the first sub-layer;
• wherein a conduction band edge of the first sub-layer has an energy below a conduction band edge of the second sub-layer;
• and
• wherein a valence band edge of the first sub-layer has an energy below a valence band edge of the second sub-layer;
• and
• a gate structure formed over one or more surfaces of the first and second sub-layers of the first channel layer.