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US 2026/0164739 A1Published application
Quasi-van der waals epitaxial heterostructure, manufacturing method, and semiconductor device including same
AssigneesKorea Advanced Institute of Science and Technology, TDS Innovation Inc.
InventorsKi Bum KANG, Su Hyun KIM
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Abstract
An embodiment relates to a heterostructure, a heterostructure manufacturing method, and various devices including the same. According to one embodiment, a novel two-dimensional/three-dimensional quasi-van der Waals epitaxy heterostructure in which a three-dimensional material is formed on a two-dimensional material may be described, thereby improving the integration density of existing semiconductor devices and enabling application to various types of semiconductor devices.
Claims29
A heterostructure, comprising:
- a three-dimensional material defined on a two-dimensional material, wherein a van der Waals gap exists at a junction surface, the three-dimensional material grows by quasi-van der Waals epitaxy, and the two-dimensional material and the three-dimensional material have different thermal expansion coefficients or lattice constants.
A heterostructure manufacturing method, comprising:
- forming a two-dimensional material;
- and
- forming a three-dimensional material using a precursor of a three-dimensional metal compound on the two-dimensional material,
- wherein the two-dimensional material and the three-dimensional material have different lattice constants and thermal expansion coefficients, and a van der Waals gap at a junction surface.
1 more element
Dependencies are inferred from the claim text.