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US 12,635,190 B2Granted
FinFET device and method of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Hao Yeh, Fu-Ting Yen
Life of this patent
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Abstract
A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, removing a portion of the fin adjacent the dummy gate structure to form a first recess, depositing a stressor material in the first recess, removing at least a portion of the stressor material from the first recess, and after removing the at least a portion of the stressor material, epitaxially growing a source/drain region in the first recess.
Claims20
A method comprising:
- forming a first recess in a substrate;
- depositing one or more material layers in the first recess;
- after depositing the one or more material layers, annealing the substrate
- after annealing, removing a first portion of the one or more material layers using a first etching process, wherein a second portion of the one or more material layers remains on a bottom of the first recess after the first etching process;
- after removing the first portion of the one or more material layers, removing at least a portion of the second portion of the one or more material layers using a second etching process, wherein the second etching process exposes a bottom of the first recess;
- and
- after removing the second portion of the one or more material layers, forming a semiconductor material in the first recess.
4 more elements
A method comprising:
- forming a first recess in a semiconductor structure;
- forming a stressor material in the first recess;
- forming a dielectric layer over the stressor material;
- forming an opening in the dielectric layer, the opening exposing exposed portions of the stressor material;
- annealing the semiconductor structure while the stressor material is in the first recess;
- after forming the opening and after annealing, removing the exposed portions of the stressor material to expose the semiconductor structure;
- and
- after removing the exposed portions of the stressor material, forming a semiconductor material in the first recess.
5 more elements
A method comprising:
- performing a first etching process on a substrate to form a first recess;
- forming a first dielectric material within the first recess;
- performing a first anneal process on the first dielectric material, the first dielectric material providing a stress to sidewalls of the first recess after the first anneal process;
- removing a first portion of the first dielectric material;
- forming a second dielectric material over remaining portions of the first dielectric material;
- forming an opening through the second dielectric material to expose the remaining portions of the first dielectric material;
- removing at least a portion of the remaining portions of the first dielectric material;
- and
- forming a semiconductor material in the first recess.
6 more elements
Dependencies are inferred from the claim text.