H10D 30/797
Being in source or drain regions
Official title: {being in source or drain regions, e.g. SiGe source or drain}
H10D30/797 (Being in source or drain regions) appears on 7,112 US grants and 9,240 published applications in this corpus.
Search patents in H10D- Granted patents
- 7,112
- Published applications
- 9,240
- Assignees
- 340
- Inventors
- 5,837
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 6 | 3 |
| 2004 | 3 | 9 |
| 2005 | 16 | 44 |
| 2006 | 18 | 90 |
| 2007 | 44 | 149 |
| 2008 | 69 | 194 |
| 2009 | 99 | 187 |
| 2010 | 138 | 160 |
| 2011 | 170 | 215 |
| 2012 | 181 | 263 |
| 2013 | 230 | 301 |
| 2014 | 300 | 288 |
| 2015 | 324 | 459 |
| 2016 | 508 | 567 |
| 2017 | 539 | 548 |
| 2018 | 531 | 432 |
| 2019 | 451 | 453 |
| 2020 | 515 | 579 |
| 2021 | 390 | 539 |
| 2022 | 466 | 766 |
| 2023 | 475 | 979 |
| 2024 | 584 | 795 |
| 2025 | 738 | 873 |
| 2026 | 316 | 347 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with embedded sigma-shaped structure6 Oct 2026US 12,757,431 B2Nanya Technology Corporation
- Diffusion cut stressors for stacked transistors22 Sep 2026US 12,745,429 B2Intel Corporation
- Method of manufacturing a semiconductor device with multi-layer gate spacers8 Sep 2026US 12,733,244 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Leakage reduction for multi-gate devices25 Aug 2026US 12,720,784 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing same25 Aug 2026US 12,720,786 B2Samsung Electronics Co., Ltd.
- Memory device and manufacturing method thereof8 Oct 2026US 2026/0313901 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Doping profile for strained source/drain region8 Oct 2026US 2026/0313975 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming source/drain contacts8 Oct 2026US 2026/0314054 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Power mosfet device having a source region embedded via heteroepitaxial growth and manufacturing method for power mosfet device1 Oct 2026US 2026/0304850 A1Chongqing Simic Semiconductor Limited
- Method of manufacturing a semiconductor device and a semiconductor device24 Sep 2026US 2026/0293276 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Semiconductor devices and methods of manufacture thereof1,575US 8,785,285 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016