Method of manufacturing a semiconductor device and a semiconductor device

A semiconductor device comprising:

• an n-type source/drain epitaxial layer at a first height above a substrate surface;
• a p-type source/drain epitaxial layer at a second height above the substrate surface, the second height different than the first height;
• a silicide layer over the n-type source/drain epitaxial layer and the p-type source/drain epitaxial layer;
• and
• an elongate source/drain contact in contact with the silicide layer, the elongate source/drain contact spanning and connecting two or more source/drain epitaxial layers, the elongate source/drain contact having a dumbbell shape in a plan view with end portions having a greater width (W1) than a center portion (W2) located between the end portions.

A semiconductor device, comprising:

• an n-type source/drain epitaxial layer spanning lower portions of two fin structures embedded in an isolation insulating layer, the n-type source/drain epitaxial layer having a concave top surface with a first height from a substrate surface;
• a p-type source/drain epitaxial layer spanning lower portions of two fin structures embedded in the isolation insulating layer, the p-type source/drain epitaxial layer having a concave top surface with a second height from the substrate surface greater than the first height;
• a first silicide layer over the n-type source/drain epitaxial layer;
• a second silicide layer over the p-type source/drain epitaxial layer;
• a first source/drain contact over the n-type source/drain epitaxial layer and in contact with the first silicide layer;
• and
• a second source/drain contact over the p-type source/drain epitaxial layer and in contact with the second silicide layer,
• wherein at least one of the first source/drain contact or second source/drain contact has a dual hammer head shape in a plan view, the dual hammer head shape having end portions that are wider than a center portion between the end portions, and is disposed over and connects two or more source/drain epitaxial layers.