H10D 30/472
Having lower bandgap active layer formed on top of wider bandgap layer
Official title: {having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT}
H10D30/472 (Having lower bandgap active layer formed on top of wider bandgap layer) appears on 524 US grants and 628 published applications in this corpus.
Search patents in H10D- Granted patents
- 524
- Published applications
- 628
- Assignees
- 207
- Inventors
- 1,052
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 3 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 3 | 0 |
| 1994 | 4 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 0 | 1 |
| 2004 | 0 | 4 |
| 2005 | 2 | 2 |
| 2006 | 2 | 6 |
| 2007 | 4 | 12 |
| 2008 | 4 | 7 |
| 2009 | 7 | 23 |
| 2010 | 18 | 26 |
| 2011 | 17 | 37 |
| 2012 | 27 | 45 |
| 2013 | 42 | 45 |
| 2014 | 56 | 48 |
| 2015 | 34 | 40 |
| 2016 | 36 | 29 |
| 2017 | 31 | 30 |
| 2018 | 23 | 26 |
| 2019 | 25 | 38 |
| 2020 | 31 | 29 |
| 2021 | 28 | 32 |
| 2022 | 27 | 35 |
| 2023 | 20 | 34 |
| 2024 | 24 | 32 |
| 2025 | 29 | 26 |
| 2026 | 16 | 20 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Epitaxies of a chemical compound semiconductor25 Aug 2026US 12,721,055 B2National Chiao Tung University
- Method of manufacturing semiconductor device18 Aug 2026US 12,713,844 B2Sumitomo Electric Industries, Ltd.
- Semiconductor device and method for manufacturing the same4 Aug 2026US 12,701,736 B2The Hong Kong University of Science and Technology
- Semiconductor structures and manufacturing methods thereof21 Jul 2026US 12,690,218 B2Enkris Semiconductor, Inc.
- Transistor structure and methods of forming the same21 Jul 2026US 12,690,398 B2Massachusetts Institute of Technology
- Semiconductor device24 Sep 2026US 2026/0293243 A1Vanguard International Semiconductor Corporation
- Gallium-nitride-based electronic chips24 Sep 2026US 2026/0293647 A1STMicroelectronics International N. V.
- Method of forming a sealed cavity embedded in a semiconductor wafer17 Sep 2026US 2026/0282502 A1Analog Devices, Inc.
- Semiconductor/dielectric interface engineering for iii-n transistors10 Sep 2026US 2026/0271325 A1Intel Corporation
- High stability gan device and gan bridge integrated circuit13 Aug 2026US 2026/0239651 A1Peking University
Most cited
By later US patents
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates525US 7,521,292 B2The Board of Trustees of the University of Illinois · 2009
- Low leakage heterojunction vertical transistors and high performance devices thereof439US 6,943,407 B2International Business Machines Corporation · 2005
- Printable semiconductor structures and related methods of making and assembling422US 7,799,699 B2The Board of Trustees of the University of Illinois · 2010
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates309US 8,198,621 B2The Board of Trustees of the University of Illinois · 2012
- Printable semiconductor structures and related methods of making and assembling272US 8,039,847 B2The Board of Trustees of the University of Illinois · 2011